Exposure apparatus for manufacturing semiconductors and method for inspecting pellicles

ABSTRACT

Example embodiments of the present invention relate to an apparatus for manufacturing semiconductors and a method of inspecting a pellicle. Other example embodiments of the present invention relate to an exposure apparatus for manufacturing semiconductors. The apparatus may include a reticle, a pellicle and a reticle chuck. The reticle may be mounted on an upper surface of the reticle chuck and the pellicle may be attached to a lower surface of the reticle chuck so that the pellicle may be detached again. There may be an empty space formed between the pellicle and the reticle. The reticle chuck may include holes for supplying or exhausting a purging gas from the empty space. Because a simpler yet more efficient purging system may be installed to the reticle chuck, an effective measure may be provided against contaminations on the pattern surface of the reticle.

PRIORITY STATEMENT

This U.S. non-provisional patent application claims priority under 35U.S.C. § 119 to Korean Patent Application No. 2005-73884, filed on Aug.11, 2005, in the Korean Intellectual Property Office (KIPO), the entirecontents of which are incorporated herein by reference.

BACKGROUND

1. Field

Example embodiments of the present invention relate to an apparatus formanufacturing semiconductors and a method of inspecting a pellicle.Other example embodiments of the present invention relate to an exposureapparatus for manufacturing semiconductors.

2. Discussion of the Related Art

A reticle may be important in a photo process for manufacturingsemiconductors. The reticle may be used as a mask in the photo processfor replicating a pattern on a wafer coated with a photoresist layer.The reticle may contain the pattern to be replicated to the wafer. Whencontaminations are accumulated or particles are deposited on a surfaceforming the pattern in the reticle, it may cause a defect to the patternthat is replicated to the wafer. In order to prevent the possibledeposition of the particles, a pellicle may be used as an organicprotection film to cover the pattern surface of the reticle.

FIG. 1 is a diagram illustrating a conventional reticle stage in anexposure apparatus of manufacturing semiconductors, and FIG. 2 is agraph illustrating a tendency of haze occurrences as exposuresaccumulated. Referring to FIG. 1, the conventional reticle stage 10 mayinclude a reticle chuck 11 on which a reticle 12 is mounted. A pellicle15 may be attached to the reticle 12 to protect the pattern formed onthe reticle 12. The pellicle 15 may include a pellicle frame 13 and apellicle membrane 14. The pellicle membrane 14 may be attached to thepellicle frame 13. A haze (e.g., a defect that grows) may occur on thepattern surface of the reticle 12 while manufacturing semiconductors ina FAB, and therefore, it is more important to maintain cleanmanufacturing environments.

FIG. 2 is a graph illustrating the haze occurrence of the conventionalart in the reticle according to exposure accumulated. The haze thatoccurs in the reticle may increase more drastically after theaccumulated exposure reaches a certain point, as shown in FIG. 2. Thereticle may be cleaned when the haze begins to increase more sharply.The pellicle may be replaced at this point. Referring to FIG. 1, thepellicle 15 may be attached to the reticle 12. The pellicle 15, which isattached to the reticle 12 by adhesives, may be detached for thecleaning of the reticle 12. The pellicle 15 may protect the pattern ofthe reticle 12. A human worker may detach the pellicle 15 manually afterthe reticle is heated such that the adhesive force is weakened. Thepellicle membrane 14 (e.g., relatively thin, about 800 nm) may be moreeasily broken during the detachment work, and so may not be used again.The pellicle may be discarded every time when the reticle is cleaned. Assemiconductor production grows, and factors causing the haze problems(e.g., increase of energy of exposure light and/or the like) increase,the maintenance period of the reticle may shorten and increase theconsumption of the pellicles.

In order to alleviate this problem, a purging system may be installed ina space between the reticle 12 and the pellicle 15 for cleanliness. Toinstall the purging system in the space between the reticle 12 and thepellicle 15, holes and tubes may need to be installed on the pellicleframe 13 for purging. The reticle 12 may be more solidly attached to thepellicle 15 by adhesives as illustrated in FIG. 1, so that the pellicle15 may be loaded to the reticle stage 10 together with the reticle 12.Installing the purging system may be practically more difficult asproposed. A purging system may be needed that is more useful andrelatively easier to install. The purging system may need to keep thespace between the reticle 12 and the pellicle 15 cleaner.

SUMMARY

Example embodiments of the present invention relate to an apparatus formanufacturing semiconductors and a method of inspecting a pellicle.Other example embodiments of the present invention relate to an exposureapparatus for manufacturing semiconductors. Example embodiments of thepresent invention provide an exposure apparatus for manufacturingsemiconductors, wherein the pellicle may not be attached to the reticlesuch that the pellicle may be used for the natural lifespan of thepellicle.

According to example embodiments of the present invention, the exposureapparatus may include a reticle and a reticle chuck. The reticle may bemounted on an upper surface of the reticle chuck and the reticle chuckmay include a pellicle attached to a lower surface of the reticle chuckso that the pellicle may be detached again. There may be an empty spaceformed between the pellicle and the reticle. The reticle chuck mayinclude holes for supplying a purging gas into or out of the emptyspace.

According to example embodiments of the present invention, the holes mayinclude an inlet and an outlet. The inlet may be for supplying thepurging gas into the empty space, while the outlet may be for exhaustingthe purging gas from the empty space. The exposure apparatus may furtherinclude a first line that is connected to the inlet and a second linethat is connected to the outlet. The first line may be for supplying thepurging gas into the empty space, while the second line may be forexhausting the purging gas from the empty space. The exposure apparatusmay further include a controller along the first line. The controllermay be for controlling the flow rate of the purging gas supplied to theempty space. The exposure apparatus may further include a pump along thesecond line. The pump may be for exhausting the purging gas from theempty space. The exposure apparatus may further include a filter betweenthe inlet and the first line.

According to example embodiments of the present invention, the exposureapparatus may further include a sensor for measuring light transmittanceof the pellicle. The sensor may include a light emitter for irradiatingultraviolet light on to the pellicle and a light receptor for detectingthe ultraviolet light transmitted through the pellicle. According toexample embodiments of the present invention, the exposure apparatus mayfurther include a pellicle cartridge for storing a plurality ofpellicles for replacement. According to example embodiments of thepresent invention, the pellicle may be mounted on a moving part, so thatthe pellicle may be more freely attached to or detached from the reticlechuck.

According to example embodiments of the present invention, the exposuresystem for manufacturing semiconductors may include a wafer stage formounting a wafer, a reticle stage, a projection optical system forprojecting the pattern of the reticle to the wafer, an illuminationoptical system for irradiating light to the reticle, a purging systemfor purging the empty space between the reticle and the pellicle bysupplying the purging gas through the holes in the reticle chuck and asensing system for measuring light transmittance of the pellicle. Thereticle stage may include a reticle chuck that includes a hole formounting the reticle containing a pattern projected to the wafer and amoving part for mounting the pellicle to protect the pattern of thereticle. The pellicle may be removably attached to the reticle chuck.

The purging system may include the supply line for supplying the purginggas into the empty space, the exhaust line for exhausting the purginggas from the empty space, the controller for controlling the flow rateof the purging gas supplied to the empty space along the supply line andthe pump for exhausting the purging gas from the empty space along theexhaust line. The exposure system may further include the filter alongthe supply line. The filter may filter chemicals, particles or both. Thepurging gas may be made up of gases which are selected from clean air,nitrogen, inert gas, or any combination of the former gases. The sensingsystem may include an UV spectrophotometer. The exposure system mayfurther include a pellicle cartridge for storing a plurality ofpellicles for replacement.

Example embodiments of the present invention also provide a method forinspecting a pellicle including a reticle that is mounted on an uppersurface of a reticle chuck and a pellicle that is separated from thereticle and attached to a lower surface of the reticle chuck in a waythat the pellicle may be detached again. The method of exampleembodiments of the present invention may include exposing the wafer byirradiating light onto the reticle, purging an empty space between thereticle and the pellicle, detaching the reticle from the reticle chuck,cleaning the reticle, detaching the pellicle from the reticle chuck,measuring light transmittance of the pellicle to obtain a lighttransmittance result, reattaching the pellicle when the lighttransmittance result of the pellicle is above or equal to a certainthreshold and replacing the pellicle when the light transmittance resultis below a threshold. The measuring of a light transmittance of thepellicle may include scanning a pellicle membrane of the pellicle usingan UV spectrophotometer.

Purging the empty space with a purging gas may be selected from cleanair, nitrogen, inert gas, or any combination of the former gases.Detaching the pellicle from the reticle chuck may include using a movingpart that is also for mounting the pellicle. According to exampleembodiments of the present invention, the reticle may be used while thepellicle is not attached to the reticle, and particles on the patternsurface of the reticle may be removed through purging while the pellicleis installed on the reticle stage. Only the reticle may be cleaned whilethe pellicle remains installed on the reticle stage, and so, thepellicle may be used for its natural lifespan, thereby increasing ormaximizing the efficiency of usage.

BRIEF DESCRIPTION OF THE DRAWINGS

Example embodiments of the present invention will be more clearlyunderstood from the following detailed description taken in conjunctionwith the accompanying drawings. FIGS. 1-6 represent non-limiting,example embodiments of the present invention as described herein.

FIG. 1 is a diagram illustrating a reticle stage in an exposureapparatus for manufacturing semiconductors according to a conventionalart;

FIG. 2 is a graph illustrating occurrences of haze versus number ofexposed wafers in a reticle stage of a conventional art;

FIG. 3 is a diagram illustrating an exposure apparatus for manufacturingsemiconductors according to example embodiments of the presentinvention;

FIG. 4 is a diagram illustrating a reticle stage in an exposure systemfor manufacturing semiconductors according to example embodiments of thepresent invention;

FIG. 5 is a diagram illustrating a monitoring operation of a pellicle ofa reticle stage in an exposure system for manufacturing semiconductorsaccording to example embodiments of the present invention; and

FIG. 6 is a flow chart illustrating a method for inspecting a pellicleaccording to example embodiments of the present invention.

DESCRIPTION OF THE EXAMPLE EMBODIMENTS OF THE PRESENT INVENTION

Various example embodiments of the present invention are described morefully hereinafter with reference to the accompanying drawings, in whichexample embodiments of the present invention are shown. Exampleembodiments of the present invention may, however, be embodied in manydifferent forms and should not be construed as limited to the exampleembodiments set forth herein. Rather, these embodiments are provided sothat this disclosure will be thorough and complete, and will fullyconvey the scope of example embodiments of the present invention tothose skilled in the art. In the drawings, the sizes and relative sizesof layers and regions may be exaggerated for clarity.

It will be understood that when an element or layer is referred to asbeing “on”, “connected to” or “coupled to” another element or layer, itmay be directly on, connected or coupled to the other element or layeror intervening elements or layers may be present. In contrast, when anelement is referred to as being “directly on,” “directly connected to”or “directly coupled to” another element or layer, there are nointervening elements or layers present. Like reference numerals refer tolike elements throughout. As used herein, the term “and/or” includes anyand all combinations of one or more of the associated listed items.

It will be understood that, although the terms first, second, third etc.may be used herein to describe various elements, components, regions,layers and/or sections, these elements, components, regions, layersand/or sections should not be limited by these terms. These terms areonly used to distinguish one element, component, region, layer orsection from another region, layer or section. A first element,component, region, layer or section discussed below could be termed asecond element, component, region, layer or section without departingfrom the teachings of the example embodiments of the present invention.

Spatially relative terms, such as “beneath”, “below”, “lower”, “above”,“upper” and the like, may be used herein for ease of description todescribe one element or feature's relationship to another element(s) orfeature(s) as illustrated in the figures. It will be understood that thespatially relative terms are intended to encompass differentorientations of the device in use or operation in addition to theorientation depicted in the figures. For example, if the device in thefigures is turned over, elements described as “below” or “beneath” otherelements or features would then be oriented “above” the other elementsor features. The exemplary term “below” can encompass both anorientation of above and below. The device may be otherwise oriented(rotated 90 degrees or at other orientations) and the spatially relativedescriptors used herein interpreted accordingly.

The terminology used herein is for the purpose of describing particularembodiments only and is not intended to be limiting of the exampleembodiments of the present invention. As used herein, the singular forms“a”, “an” and “the” are intended to include the plural forms as well,unless the context clearly indicates otherwise. It will be furtherunderstood that the terms “comprises” and/or “comprising,” when used inthis specification, specify the presence of stated features, integers,steps, operations, elements, and/or components, but do not preclude thepresence or addition of one or more other features, integers, steps,operations, elements, components, and/or groups thereof.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which example embodiments of the presentinvention belong. It will be further understood that terms, such asthose defined in commonly used dictionaries, should be interpreted ashaving a meaning that is consistent with their meaning in the context ofthe relevant art and will not be interpreted in an idealized or overlyformal sense unless expressly so defined herein.

Example embodiments of the present invention relate to an apparatus formanufacturing semiconductors and a method of inspecting a pellicle.Other example embodiments of the present invention relate to an exposureapparatus for manufacturing semiconductors.

FIG. 3 is a diagram illustrating an exposure apparatus for manufacturingsemiconductors according to example embodiments of the presentinvention. Referring to FIG. 3, the exposure apparatus 100 may include awafer stage 150 that contains a wafer (W) to be exposed in a housing 102and moves the wafer (W) in an up-and-down, right-and-left, slanted orrotational direction. The exposure apparatus 100 may also include areticle stage 120 on which a reticle containing a pattern to beprojected to the wafer (W) is mounted. The exposure apparatus 100 mayalso include a projection optical system 140 for projecting the patternof the reticle to the wafer (W) and an illumination optical system 115for irradiating a light that is generated from a light source 110 to thereticle.

Clean air may be introduced into the housing 102 in order to maintain aclean environment inside of the exposure apparatus 100. The exposureapparatus 100 may further include a reticle loadlock chamber 160 fortransferring the reticle to the reticle stage 120 and a wafer loadlockchamber 170 for transferring the wafer (W) to the wafer stage 150. Thelight source 110 may be i-line (e.g., a wavelength of about 365 nm), aKrF excimer laser of about 248 nm, an ArF excimer laser of about 193 nmor an F2 excimer laser of about 157 nm. The light source 110 thatgenerates light of relatively shorter wavelengths (e.g., ArF excimerlaser or F2 excimer laser that generates ultraviolet rays) may providean improved resolution, thereby satisfying requirements for higher levelof integration of semiconductor devises.

FIG. 4 is a diagram illustrating a reticle stage in an exposure systemfor manufacturing semiconductors according to example embodiments of thepresent invention. Referring to FIG. 4, the reticle stage 120 mayinclude a reticle chuck 122 on which a reticle 121 containing a specificpattern is mounted. The reticle chuck 122 may include guides 123 thatare in contact with a side of the reticle 121 and are for mounting thereticle 121 properly and firmly on the reticle chuck 122. A pellicle 130may be attached to a lower surface of the reticle chuck 122 so that thepellicle 130 can be detached again. The pellicle 130 may not be attachedto the reticle chuck 122 by adhesives.

The pellicle 130 may not be solidly attached to the lower surface of thereticle chuck 122. The pellicle 130 may be mounted on a moving part 134and may be attached to or detached from the lower surface of the reticlechuck 122. The pellicle 130 may include a pellicle membrane 132 of whichlight transmittance is about 100% and a pellicle frame 131 forsupporting the pellicle membrane 132. The pellicle membrane 132 may notbe damaged by friction while the pellicle 130 is mounted by the movingpart 134. The moving part 134 may include a pellicle supporter 135 forupholding the pellicle frame 131. The pellicle membrane 132 may beattached to the pellicle frame 131 in a way that the pellicle membrane132 is not in direct contact with the pellicle supporter 135.

When the reticle 121 is mounted on the reticle chuck 122 and thepellicle 130 is attached on the bottom surface of the reticle chuck 122,an empty space (A) may form between the reticle 121 and the pellicle130. In order to improve the reliability of an exposure process, theempty space (A) may be filled with a flow of gases which are selectedfrom clean air, nitrogen, inert gas and/or any combination of the formergases. The empty space (A) may become cleaner by lowering possibleparticle deposition on the pattern surface of the reticle 121 and thegas flow may remove particles on the pattern surface of the reticle 121or particles suspending in the empty space (A). An inlet 124 may beformed on a side of the reticle chuck 122 for supplying the gas, whilean outlet 125 may be formed on the other side of the reticle chuck 122.The inlet 124 may be connected to a line 126 for supplying the gas intothe empty space (A). The outlet 125 may be connected to a line 127 forexhausting the gas from the empty space (A). A filter 128 may beinstalled between the line 126 and the inlet 122 for filtering chemicalsand/or particles. The filter 128, for example, may have just onefiltering function for chemicals and/or particles. The filter 128 alsomay have a combined filtering function for both chemicals and particles.

When an undesired amount of the gas is supplied into the empty space (A)and a pressure of the empty space (A) is higher than that of inside theapparatus 100, or conversely the pressure of the empty space (A) islower than that of the apparatus 100, then the pellicle membrane 132 maybe inflated or depressed. An air controller 126 a may be installed inthe line 126 for controlling a flow rate of the gas supplied into theempty space (A). A pump 127 a may be installed in the line 127 so thatthe flow of gas into or away from the empty space (A) may be moresufficient and smoother. The reticle stage 120 described as aboveoperates as follows.

Organic pollutants may arise in an ArF exposure apparatus that carriesout a critical process for manufacturing a VLSI memory chip of a designrule lower than about 100 nm. The material of the pellicle forprotecting the pattern surface of the reticle may evaporate. Thepellicle in the ArF exposure apparatus may use the exposure lights withenergy higher than that of KrF exposure apparatus. The organicpollutants may deposit on the pattern surface of the reticle resultingin the size of the exposed pattern becoming irregular or distorted inthe photo process. This may also happen with an F2 exposure apparatus.In order to avoid the undesirable consequences, the clean gas may besupplied to the empty space (A) to make the empty space (A) cleaner orremoving the particles sustained in the empty space (A).

With the ArF or F excimer laser as the light source 110, several oxygenabsorption bands may exist near each wavelength of the light. In oxygenabsorption bands, the oxygen may absorb the light to form ozone. Theozone may accelerate the light absorption, thereby reducing the lighttransmittance of the pellicle membrane 132. Various products generatedby the ozone may also contaminate the reticle 121. By keeping the cleangas flowing through the empty space (A), the oxygen concentration of theempty space (A) may be reduced to a lower level, thereby reducing thepossibility of the reticle 121 contamination.

The reticle 121 may be cleaned during maintenance, while the pellicle130 stays attached to the reticle chuck 122, so that the pellicle 130may be used for its natural lifespan. Compared with a cleaning period ofthe reticle 121, the degradation of the pellicle 130 takes place moreslowly. Because the reticle 121 and the pellicle 130 are separated fromeach other in the apparatus 100 of example embodiments of the presentinvention, it may not be necessary to remove or discard the pellicle 130for cleaning the reticle 121. The cleaning period may become shorterwhen the ArF or F2 excimer laser is used as the light source 110. TheArF or F2 excimer laser, with light energy higher than that of the KrFexcimer laser, may increase a possibility of the haze occurrence.Example embodiments of the present invention may not remove or discardthe pellicle 130 to clean the reticle 121.

Referring to FIG. 3 again, the apparatus 100 may further include asensor 190 for measuring the degradation of the pellicle 130. Theapparatus 100 may further include a pellicle cartridge 180 within thehousing 102. The pellicle cartridge 180 may store the pellicles 130 forreplacement. The sensor 190, for example, may be a UV spectrophotometerincluding a light emitter 191 and a light receptor 192. With repetitionof the exposure process, the amount of light exposure of the pellicle130 may accumulate and the light transmittance of the pellicle membrane132 may decrease. When the accumulated light exposure exceeds a givenvalue (for example, about 50,000,000 mJ), the degradation of thepellicle 130 may be measured and the pellicle 130 may be replaced. Theinspection and replacement of the pellicle 130 described as above may becarried out as follows.

FIG. 5 is a diagram illustrating monitoring operation of the pellicle ofthe reticle stage according to example embodiments of the presentinvention, and FIG. 6 is a flow chart illustrating a method forinspecting a pellicle of example embodiments of the present invention.Referring to FIGS. 5 and 6, the reticle 121 may be separated from thereticle chuck 122 and cleaned after the exposure process is carried outfor a given period of time. The sensor 190 may measure the degradationof the pellicle 130. When the reticle 121 is separated from the reticlechuck 122 for cleaning, the pellicle 130 may be transferred by themoving part 134 to the sensor 190. After the pellicle 130 is transferredto the sensor 190, the light emitter 191 may emit ultraviolet rays toscan the pellicle membrane 132 and the light receptor 192 may detect thelight transmitted through the pellicle membrane 132. The sensor 190 maymeasure the light transmittance. When the light transmittance is above athreshold (e.g., about 99%), the pellicle 130 may be installed on thereticle chuck 122 again to be used in the exposure process. When thelight transmittance is below a threshold (e.g., less than about 99%),the pellicle 130 may be transferred to the pellicle cartridge to bediscarded and a new pellicle 130 may be installed to the reticle chuck122 for the exposure process.

Because the reticle 121 and the pellicle 130 are separated from eachother, the inspection and replacement of the pellicle 130 may not needto be done manually, but it may be done based on a real-time monitoringat the time of the reticle 121 replacement. The degree of thedegradation of the pellicle 130 may be identified with improved accuracyand the pellicle 130 may be replaced at the right time in the naturallifespan, thereby increasing or maximizing efficiency of the pellicle130 usage. Setting a clear criterion for timing to inspect the pellicle130 may be more difficult otherwise. The degradation of the pellicle 130may take place differently for different exposure processes, so it maybe inaccurate to set an inspection period for the pellicle 130 based onthe accumulated light exposure.

When the ArF excimer laser is used as the light source 110, the lighttransmittance of the pellicle 130 may be above about 99% for anaccumulated light exposure of about 50,000,000 mJ. The degradation ofthe pellicle 130, caused by the exposure light, may proceed relativelyslowly in a KrF exposure process (e.g., the exposure process using theKrF excimer laser as the light source 110). The KrF exposure process mayresult in more productivity than that of the ArF exposure process. Whenthe pellicle 130 is replaced based on only the accumulated lightexposure, the pellicle 130 may be wasted. In the apparatus where thepellicle 130 is separated from the reticle 121, the degradation of thepellicle 130 may be measured at the time of replacing the reticle 121and the pellicle 130 may be replaced at a proper time.

Because the reticle 121 is separated from the pellicle 130 according toexample embodiments of the present invention, the reticle 121 may befabricated in a simpler way. The fabrication of the reticle 121, forexample, may include mounting the pellicle 130 to the reticle 121, inaddition to forming a pattern on the reticle 121. According to exampleembodiments of the present invention, the fabrication of the reticle 121may not require mounting the pellicle 130 to the reticle 121. There maybe no need for removing or mounting the pellicle 130 or for removing theadhesives.

Although various example embodiments of the present invention have beendescribed in connection with the example embodiments of the presentinvention illustrated in the accompanying drawings, it is not limitedthereto. It will be apparent to those skilled in the art that varioussubstitution, modifications and changes may be thereto without departingfrom the scope and spirit of example embodiments of the presentinvention.

1. An exposure apparatus for manufacturing semiconductors comprising: areticle that is mounted on an upper surface of a reticle chuck; and areticle chuck that includes holes for supplying and exhausting a purginggas from an empty space and a pellicle that is removably attached to alower surface of the reticle chuck, wherein the pellicle is separatedfrom the reticle, forming the empty space between the pellicle and thereticle.
 2. The exposure apparatus of claim 1, further comprising: aninlet for supplying the purging gas into the empty space; and an outletfor exhausting the purging gas from the empty space.
 3. The exposureapparatus of claim 2, further comprising: a first line that is connectedto the inlet, wherein the first line is for supplying the purging gasinto the empty space; and a second line that is connected to the outlet,wherein the second line is for exhausting the purging gas from the emptyspace.
 4. The exposure apparatus of claim 3, further comprising: acontroller along the first line, wherein the controller controls theflow rate of the purging gas supplied to the empty space.
 5. Theexposure apparatus of claim 3, further comprising: a pump along thesecond line, wherein the pump exhausts the purging gas from the emptyspace.
 6. The exposure apparatus of claim 3, further comprising: afilter between the inlet and the first line.
 7. The exposure apparatusof claim 1, further comprising: a sensor for measuring a lighttransmittance of the pellicle.
 8. The exposure apparatus of claim 7,wherein the sensor includes: a light emitter for irradiating ultravioletlight on the pellicle; and a light receptor for detecting theultraviolet light transmitted through the pellicle.
 9. The exposureapparatus of claim 1, further comprising: a pellicle cartridge forstoring a plurality of pellicles for replacement.
 10. The exposureapparatus of claim 1, wherein the reticle is mounted on a moving partand is removably attached to the reticle chuck.
 11. An exposure systemfor manufacturing semiconductors, comprising: a wafer stage for mountinga wafer; and a reticle stage including: the exposure apparatus accordingto claim 1, wherein the reticle contains a pattern to be projected tothe wafer; a moving part for mounting the pellicle to be removablyattached to the reticle chuck, wherein the pellicle protects the patternof the reticle; a projection optical system for projecting the patternof the reticle to the wafer; an illumination optical system forirradiating light onto the reticle; a purging system for purging theempty space by supplying the purging gas through the holes in thereticle chuck, wherein the empty space is formed between the reticle andthe pellicle; and a sensing system for measuring light transmittance ofthe pellicle.
 12. The exposure system of claim 11, wherein the purgingsystem includes: a supply line for supplying the purging gas into theempty space; an exhaust line for exhausting the purging gas from theempty space; a controller along the supply line, wherein the controllercontrols the flow of the purging gas supplied to the empty space; and apump along the exhaust line, wherein the pump exhausts the purging gasfrom the empty space.
 13. The exposure system of claim 12, furthercomprising: a filter capable of filtering at least one of chemicals andparticles.
 14. The exposure system of claim 12, wherein the purging gasis one selected from the group including clean air, nitrogen, inert gas,and a mixture thereof.
 15. The exposure system of claim 11, wherein thesensing system includes an UV spectrophotometer.
 16. The exposure systemof claim 11, further comprising: a pellicle cartridge for storing aplurality of pellicles.
 17. A method for inspecting a pellicle, themethod comprising: exposing a wafer by irradiating light onto a reticle;purging an empty space between the reticle and the pellicle; detachingthe reticle from a reticle chuck; cleaning the reticle; detaching thepellicle from the reticle chuck; measuring light transmittance of thepellicle to obtain a light transmittance result; re-attaching thepellicle to the reticle chuck when the light transmittance result isabove or equal to a threshold; and replacing the pellicle when the lighttransmittance result is below a threshold.
 18. The method of claim 17,wherein measuring a light transmittance of the pellicle includesscanning a pellicle membrane of the pellicle using an UVspectrophotometer.
 19. The method of claim 17, wherein purging the emptyspace includes supplying a purging gas through the empty space and isone selected from the group including clean air, nitrogen, inert gas,and a mixture thereof.
 20. The method of claim 17, wherein detaching thepellicle from the reticle chuck includes detaching a moving part onwhich the pellicle is mounted.